BACKSIDE IRRADIATION SOLID STATE IMAGE SENSOR AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To facilitate the manufacturing of a backside irradiation solid state image sensor, and to attain compact packaging. SOLUTION: In the manufacturing method of a backside irradiation solid state image sensor where a photoelectric conversion element receiving light entering from t...

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Bibliographic Details
Main Author UIE SHINJI
Format Patent
LanguageEnglish
Published 11.09.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To facilitate the manufacturing of a backside irradiation solid state image sensor, and to attain compact packaging. SOLUTION: In the manufacturing method of a backside irradiation solid state image sensor where a photoelectric conversion element receiving light entering from the backside of a semiconductor substrate 1 and a means for reading out a signal detected by the photoelectric conversion element are formed on the surface side of the semiconductor substrate 1 and a supporting substrate 54 is stuck to the surface side, an interconnect 71 connected electrically with the signal read-out means is formed previously on the supporting substrate 54 before it is stuck. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20070043771