SUBSTRATE PROCESSING DEVICE

• Main Authors: TANAKA AKINORI, TOYODA KAZUYUKI, NOMURA RUI
• Format: Patent
• Language: English
• Published: 04.09.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a plasma processing device in which electrodes can easily be positioned. SOLUTION: In the substrate processing device, substrates to be processed are concentrically arranged in a reaction chamber for multiple stages by leaving prescribed intervals, processing gas is supplied and the substrates to be processed are processed under prescribed pressure. The electrodes 201 generating plasma from respective surfaces of the substrates to be processed to prescribed distances and processing the substrates are arranged. Positioning parts 220 which concentrically position the substrates are installed in the electrodes 201. Positioning mechanisms 224 and 225 which collectively position the electrodes are disposed in the respective positioning parts. COPYRIGHT: (C)2008,JPO&INPIT