SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To improve the area efficiency of an ESD protection circuit which uses a bipolar transistor. SOLUTION: An integrated circuit includes an inner circuit 121 which contains a bipolar transistor 124 for the circuit and a protection bipolar transistor 120 for protecting the inner ci...
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Main Author | |
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Format | Patent |
Language | English |
Published |
07.08.2008
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To improve the area efficiency of an ESD protection circuit which uses a bipolar transistor. SOLUTION: An integrated circuit includes an inner circuit 121 which contains a bipolar transistor 124 for the circuit and a protection bipolar transistor 120 for protecting the inner circuit 121 from surges, wherein the emitter and base of the protection bipolar transistor 120 are short-circuited. COPYRIGHT: (C)2008,JPO&INPIT |
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Bibliography: | Application Number: JP20070015875 |