SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve the area efficiency of an ESD protection circuit which uses a bipolar transistor. SOLUTION: An integrated circuit includes an inner circuit 121 which contains a bipolar transistor 124 for the circuit and a protection bipolar transistor 120 for protecting the inner ci...

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Bibliographic Details
Main Author SHINDO MASAO
Format Patent
LanguageEnglish
Published 07.08.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To improve the area efficiency of an ESD protection circuit which uses a bipolar transistor. SOLUTION: An integrated circuit includes an inner circuit 121 which contains a bipolar transistor 124 for the circuit and a protection bipolar transistor 120 for protecting the inner circuit 121 from surges, wherein the emitter and base of the protection bipolar transistor 120 are short-circuited. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20070015875