SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent short circuits between adjacent gate electrodes and between the gate electrodes and a contact plug without extending a distance between them while keeping good operating characteristics, and to provide its manufacturing method...

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Bibliographic Details
Main Authors SUEYOSHI TATSUKI, MATSUMOTO KUNIOMI, NAKADA YUKINORI
Format Patent
LanguageEnglish
Published 26.06.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent short circuits between adjacent gate electrodes and between the gate electrodes and a contact plug without extending a distance between them while keeping good operating characteristics, and to provide its manufacturing method. SOLUTION: In a predetermined region on a semiconductor substrate 10, impurity diffusion regions 6 are formed separately. On a region between the two impurity diffusion regions, the gate electrodes (3 and 5) are formed. In order to establish electrical connection between the impurity diffusion regions 6 and an interconnection 12, the contact plug 11 is formed penetrating through an interlayer dielectric 9. On the outer periphery of the contact plug 11, at least a part of a region facing the control gate electrode 5 is formed with a backfilling insulation film 15 formed by a process different from a process of forming the interlayer dielectric 9. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20060331450