SEMICONDUCTOR LASER, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor laser whose threshold value for laser oscillation is reduced. SOLUTION: The semiconductor laser 10 includes a substrate 1, a cavity 2, a stripe layer 4, a positive electrode 5 and a negative electrode 6. The cavity 2 is prepared on the substrate 1. Th...

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Bibliographic Details
Main Authors HARAYAMA TAKAHISA, FUKUSHIMA TAKEHIRO, SASAKI NORIHIKO, NAKAE MINORU
Format Patent
LanguageEnglish
Published 19.06.2008
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor laser whose threshold value for laser oscillation is reduced. SOLUTION: The semiconductor laser 10 includes a substrate 1, a cavity 2, a stripe layer 4, a positive electrode 5 and a negative electrode 6. The cavity 2 is prepared on the substrate 1. The cavity 2 includes an active layer and emits laser light. The stripe layer 4 has a planar ring shape and is formed on the cavity 2. The positive electrode 5 has a planar ring shape and is formed on the stripe layer 4. The negative electrode 6 is formed on a backside of the substrate 1. The stripe layer 4 controls spread of current injected from the positive electrode 5 to the cavity 2. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20070284877