LIGHT-EMITTING DIODE, MANUFACTURING METHOD THEREFOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE LIGHTING DEVICE, LIGHT-EMITTING DIODE DISPLAY, AND ELECTRONIC EQUIPMENT

• Main Author: YASUDA TOSHIKAZU
• Format: Patent
• Language: English
• Published: 05.06.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a light-emitting diode which has extremely high emission efficiency and can be manufactured by one cycle of epitaxial growth at low cost, and a manufacturing method for the light-emitting diode. SOLUTION: Projections 12 are formed on one main surface of a board 11, and a nitride-based group III-V compound semiconductor layer 15 is grown in recesses 13 between the projections 12 after growth states of triangular sectional shapes with bottom sides along bottom faces of the recessions 13. The nitride-based group III-V compound semiconductor layer 15 is further grown laterally, and then a nitride-based group III-V compound semiconductor layer containing an active layer 17 is grown thereon. Threading dislocation 19 developing on portions corresponding to the projections 12 and/or central portions between recesses 13 adjacent to one another in the layers are eliminated by forming trenches 20 on corresponding portions, and then a dielectric 21 is buried in the trenches 20 so buried that the surface of the dielectric 21 has a recess and/or a projection, or light scattering particles are contained in the dielectric 21. COPYRIGHT: (C)2008,JPO&INPIT