PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

• Main Author: KIYOTOSHI MASAHIRO
• Format: Patent
• Language: English
• Published: 01.05.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a production method of a semiconductor device by which an STI having a small width is formed with an insulating film having advantageous embedding properties and with respect to an STI having a large width, the problem of a film peeling by a stress etc. can be avoided. SOLUTION: This production method of a semiconductor device comprises: forming simultaneously a first groove 1061 and a second groove 1062 having a larger width than that of the first groove on the main surface of a semiconductor substrate 101; forming a first insulating film 108 on the main surface of the semiconductor substrate 101 and in the inside of the first and second grooves 1061,1062 to lessen the width of the opening part of the first groove 1061; forming a second insulating film 109 on the first insulating film 108 by a high density plasma CVD to form an air gap in the first groove 1061 while sealing the opening part of the first groove, and embedding the second insulating film 109 in the second groove 1062; removing the second insulating film 109 sealing the opening part by an anisotropic etching; and embedding an insulating film 110 having a fluidity during the film formation in the air gap. COPYRIGHT: (C)2008,JPO&INPIT