SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To reduce contact resistance between a resistor and a wiring layer by directly connecting them on an insulation layer. SOLUTION: In the semiconductor device, a resistor 25 made of a titanium nitride (TiN) film is directly connected with wiring layers 28 and 29 on an insulation...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
24.04.2008
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| Subjects | |
| Online Access | Get full text |
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| Abstract | PROBLEM TO BE SOLVED: To reduce contact resistance between a resistor and a wiring layer by directly connecting them on an insulation layer. SOLUTION: In the semiconductor device, a resistor 25 made of a titanium nitride (TiN) film is directly connected with wiring layers 28 and 29 on an insulation layer 26. Thanks to such a structure, an contact area between the resistor 25 and the wiring layers 28 and 29 is increased and the contact resistance is reduced. Furthermore, a clearance L1 between the resistsor 25 and an epitaxial layer 3 is enlarged to reduce the parasitic capacitance in the resistor 25 and improve the high-frequency characteristic of the semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT |
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| AbstractList | PROBLEM TO BE SOLVED: To reduce contact resistance between a resistor and a wiring layer by directly connecting them on an insulation layer. SOLUTION: In the semiconductor device, a resistor 25 made of a titanium nitride (TiN) film is directly connected with wiring layers 28 and 29 on an insulation layer 26. Thanks to such a structure, an contact area between the resistor 25 and the wiring layers 28 and 29 is increased and the contact resistance is reduced. Furthermore, a clearance L1 between the resistsor 25 and an epitaxial layer 3 is enlarged to reduce the parasitic capacitance in the resistor 25 and improve the high-frequency characteristic of the semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT |
| Author | SATO YOSHINORI YAMAMAE TAKESHI ONE NAOKI |
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| Notes | Application Number: JP20060276528 |
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| PublicationYear | 2008 |
| RelatedCompanies | SANYO ELECTRIC CO LTD SANYO SEMICONDUCTOR CO LTD |
| RelatedCompanies_xml | – name: SANYO SEMICONDUCTOR CO LTD – name: SANYO ELECTRIC CO LTD |
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| Snippet | PROBLEM TO BE SOLVED: To reduce contact resistance between a resistor and a wiring layer by directly connecting them on an insulation layer. SOLUTION: In the... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
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