SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To reduce contact resistance between a resistor and a wiring layer by directly connecting them on an insulation layer. SOLUTION: In the semiconductor device, a resistor 25 made of a titanium nitride (TiN) film is directly connected with wiring layers 28 and 29 on an insulation...

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Bibliographic Details
Main Authors ONE NAOKI, SATO YOSHINORI, YAMAMAE TAKESHI
Format Patent
LanguageEnglish
Published 24.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To reduce contact resistance between a resistor and a wiring layer by directly connecting them on an insulation layer. SOLUTION: In the semiconductor device, a resistor 25 made of a titanium nitride (TiN) film is directly connected with wiring layers 28 and 29 on an insulation layer 26. Thanks to such a structure, an contact area between the resistor 25 and the wiring layers 28 and 29 is increased and the contact resistance is reduced. Furthermore, a clearance L1 between the resistsor 25 and an epitaxial layer 3 is enlarged to reduce the parasitic capacitance in the resistor 25 and improve the high-frequency characteristic of the semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20060276528