GAS BARRIER PROPERTY PLASTIC VESSEL PRODUCTION DEVICE AND METHOD FOR PRODUCING THE SAME

• Main Authors: NAKATANI MASAKI, SAKAMOTO YUICHI, KAWABE TAKEHARU, OIKAWA AKIHISA, TADA SHIGEKAZU, TAKEMOTO YOSHIHIDE, KAGE TAKESHI
• Format: Patent
• Language: English
• Published: 17.04.2008
• Subjects: ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; CONVEYING; DIFFUSION TREATMENT OF METALLIC MATERIAL; HANDLING THIN OR FILAMENTARY MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PACKAGES; PACKAGING ELEMENTS; PACKING; PERFORMING OPERATIONS; STORING; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

PROBLEM TO BE SOLVED: To suppress the generation of plasma at the part other than a vacuum chamber upon the production of a gas barrier property plastic vessel, and further, to suppress the generation of foreign matter derived from a gaseous starting material. SOLUTION: Regarding the device where a gas barrier property thin film is deposited on the inner wall face of a plastic vessel, the upper end of an external electrode 1 is located at a part lower than the zenith Y of the vessel 8, an annular member 2 made of a dielectric substance is arranged at the upper part of the external electrode 1 and also around the outside of the vessel 8, the external electrode 1 and the annular member 2 compose a vacuum chamber 3, and, provided that the synthetic electrostatic capacitance of the electrostatic capacitance of the vessel itself and the electrostatic capacitance of the internal space thereof is defined as C1and the synthetic electrostatic capacitance of the external space of the vessel in the internal space of a film deposition unit including the internal space of the vacuum chamber and the internal space of an exhaust chamber is defined as C2, the relation of C1>C2is valid, and a power source 27 feeds low frequency electric power with a frequency of 400 kHz to 4 MHz. COPYRIGHT: (C)2008,JPO&INPIT