METHOD OF MANUFACTURING THIN FILM, METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film capable of stably forming the thin film having a uniform thickness on a substrate on which a conductive line pattern has been formed, a method of manufacturing a thin film transistor having superior characteristics, and the thin...

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Bibliographic Details
Main Authors OKADA MASAKAZU, HIRAO TAKEYA
Format Patent
LanguageEnglish
Published 10.04.2008
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Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film capable of stably forming the thin film having a uniform thickness on a substrate on which a conductive line pattern has been formed, a method of manufacturing a thin film transistor having superior characteristics, and the thin film transistor. SOLUTION: The method of manufacturing the thin film has the steps of: providing a film manufacturing apparatus including a first discharge electrode, a second discharge electrode placed opposed to the first discharge electrode and a high frequency power source, which supplies high frequency power between the first discharge electrode and a second discharge electrode; placing a substrate on which a conductive line pattern has been formed on the second discharge electrode; applying the high frequency power from the high frequency power source while generating plasma by using discharged gas under an atmospheric pressure or a near-atmospheric pressure; and forming the thin film on the substrate. A space ratio (W/L) of a line width W (W>0) of the conductive line pattern to a spatial distance L between the first discharge electrode and the substrate is set not more than 0.1. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20070174957