PATTERNED SAPPHIRE SUBSTRATE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE

• Main Authors: WU LI-YUN, LEE YEEUANG, LIU CHE-MING, CHIN SHIJIN
• Format: Patent
• Language: English
• Published: 03.04.2008
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a patterned sapphire substrate. SOLUTION: The manufacturing method includes process wherein first, a sapphire substrate is prepared and a mask layer is formed on the sapphire substrate. Here, the mask layer having a proper pattern exposes part of the sapphire substrate. Next, wet etching processing is carried out, and the exposed part of the sapphire is removed. An etching agent used in the wet etching processing contains sulfuric acid and a mixture of sulfuric acid and phosphoric acid. Next, the mask layer is removed, and a patterned sapphire substrate is formed. Furthermore, a method for manufacturing a light-emitting diode is included. COPYRIGHT: (C)2008,JPO&INPIT