METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which reduces and simplifies the number of times of lithography processes using photoresist and improves throughput. SOLUTION: An etching mask for forming a pattern on a layer to be processed such as a conductive lay...

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Bibliographic Details
Main Authors MIYAIRI HIDEKAZU, HIGA EIJI
Format Patent
LanguageEnglish
Published 03.04.2008
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACHINE TOOLS
MATERIALS THEREFOR
METAL-WORKING NOT OTHERWISE PROVIDED FOR
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which reduces and simplifies the number of times of lithography processes using photoresist and improves throughput. SOLUTION: An etching mask for forming a pattern on a layer to be processed such as a conductive layer and a semiconductor layer is manufactured without lithography technique using photoresist. The etching mask has a laminated structure composed of an optical absorption layer and an insulating layer and is formed by use of laser ablation through the irradiation of laser beam via a photomask. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20070214665