METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which reduces and simplifies the number of times of lithography processes using photoresist and improves throughput. SOLUTION: An etching mask for forming a pattern on a layer to be processed such as a conductive lay...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
03.04.2008
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which reduces and simplifies the number of times of lithography processes using photoresist and improves throughput. SOLUTION: An etching mask for forming a pattern on a layer to be processed such as a conductive layer and a semiconductor layer is manufactured without lithography technique using photoresist. The etching mask has a laminated structure composed of an optical absorption layer and an insulating layer and is formed by use of laser ablation through the irradiation of laser beam via a photomask. COPYRIGHT: (C)2008,JPO&INPIT |
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Bibliography: | Application Number: JP20070214665 |