FORCE SENSOR AND MANUFACTURING METHOD THEREFOR

• Main Authors: KURIYAMA NARIAKI, OKAMURA DAISUKE, OSATO TAKESHI, KUBOTA TADAHIRO, SASAHARA JUN
• Format: Patent
• Language: English
• Published: 06.03.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MEASURING; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE; PHYSICS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TESTING

PROBLEM TO BE SOLVED: To prevent any bonding from degrading when a force sensor-use chip and a damping device are subjected to an anodic bonding through a glass layer. SOLUTION: A manufacturing method for a force sensor which includes the force sensor-use chip 2 for detecting a transmitted external force F by using a strain-resistance element and the damping device 3 for fixing the force sensor-use chip 2 and transmitting the external force F to the force sensor-use chip while damping it, and which is made up such that the force sensor-use chip 2 is bonded to the damping device 3 through the glass layer, comprises: a step (a) of forming a glass thin film 10 as the glass layer on the force sensor-use chip 2; and a step (b) of bonding the glass thin film 10 formed on the force sensor-use chip 2 to the damping device 3 by using the anodic bonding which applies a negative voltage to the force sensor-use chip 2 side, and a positive voltage to the damping device 3 side. Moreover, the glass thin film 10 is formed by using an evaporation method or a sputtering method. COPYRIGHT: (C)2008,JPO&INPIT