MANUFACTURING METHOD OF SEMICONDUCTOR CIRCUIT DEVICE

• Main Author: KARIYA ATSUSHI
• Format: Patent
• Language: English
• Published: 21.02.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor circuit device in which a low resistance uniform thickness barrier metal is formed. SOLUTION: The manufacturing method of a semiconductor circuit device includes a step of forming a first film subjected to plasma treatment after a TiN film is deposited by a chemical vapor deposition method (CVD) with tetrakis dimethylamino titanium (TDMAT) taken as a stock material. Further, the manufacturing method of the semiconductor circuit device includes a step of forming a second film by depsositing a TiN film by the chemical vapor phase deposition method (CVD) with a flow rate of tetrakis dimethylamino titanium (TDMAT) of 2 to 5 mg per minute. COPYRIGHT: (C)2008,JPO&INPIT