METHOD FOR FORMING TaSiN FILM

• Main Authors: KOUNO YUMIKO, NAKAMURA KAZUHITO, YAMAZAKI HIDEAKI
• Format: Patent
• Language: English
• Published: 07.02.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for forming the TaSiN film which can control the Si density over a wide range with a high degree of accuracy. SOLUTION: The TaSiN film is formed by introducing the organic Ta compound gas having the Ta=N bonding, Si-containing gas and N-containing gas into a treatment container with a built-in substrate. During such a film forming process, the Si density in the film is controlled by controlling at least one of a partial pressure of the Si-containing gas within the treatment container, a total pressure, filming temperature and a partial pressure of the N-containing gas within the treatment container. COPYRIGHT: (C)2008,JPO&INPIT