METHOD FOR FORMING TaSiN FILM
PROBLEM TO BE SOLVED: To provide a method for forming the TaSiN film which can control the Si density over a wide range with a high degree of accuracy. SOLUTION: The TaSiN film is formed by introducing the organic Ta compound gas having the Ta=N bonding, Si-containing gas and N-containing gas into a...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
07.02.2008
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method for forming the TaSiN film which can control the Si density over a wide range with a high degree of accuracy. SOLUTION: The TaSiN film is formed by introducing the organic Ta compound gas having the Ta=N bonding, Si-containing gas and N-containing gas into a treatment container with a built-in substrate. During such a film forming process, the Si density in the film is controlled by controlling at least one of a partial pressure of the Si-containing gas within the treatment container, a total pressure, filming temperature and a partial pressure of the N-containing gas within the treatment container. COPYRIGHT: (C)2008,JPO&INPIT |
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Bibliography: | Application Number: JP20070164250 |