METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a single crystal silicon thin film with high planarity can be formed on an insulation film simply and conveniently at a low cost. SOLUTION: The method of manufacturing a semiconductor device includes a step to...

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Bibliographic Details
Main Authors OZAWA YOSHIO, NATORI KATSUAKI, MIYANO KIYOTAKA, MIZUSHIMA ICHIRO
Format Patent
LanguageEnglish
Published 20.12.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a single crystal silicon thin film with high planarity can be formed on an insulation film simply and conveniently at a low cost. SOLUTION: The method of manufacturing a semiconductor device includes a step to form an insulation film 12 having an opening on the main surface of a single crystal silicon 11, a step to form an amorphous silicon film on the surface of the single crystal silicon 11 exposing in the opening and the surface of the insulation film, a heat treatment step to change the amorphous silicon film into single crystal, and a step to form a single crystal silicon film 19 on an area 15 wherein the amorphous silicon film is changed into single crystal, by vapor phase growth method. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20060157638