METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

• Main Author: HARA KAZUTO
• Format: Patent
• Language: English
• Published: 20.12.2007
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal capable of growing a single crystal of a desired crystal polymorphism such as 4H-type SiC. SOLUTION: In a method for producing a silicon carbide single crystal by arranging a seed crystal consisting of silicon carbide in a reaction vessel and growing a single crystal consisting of silicon carbide on the surface of the seed crystal using a raw material gas containing a Si component and a C component introduced into the reaction vessel, the Si/C ratio of the charged raw materials is set higher at an initial growth stage of the single crystal than at a high speed growth stage of the single crystal by setting the Si/C ratio of the charged raw materials at about 2.2 at the initial growth stage of the single crystal from t7 to t8 and at about 1 at the high speed growth stage from t8 to t9. Thereby, a SiC single crystal having the same polymorphism as a SiC seed crystal can be grown stably. COPYRIGHT: (C)2008,JPO&INPIT