SIMULATION METHOD, SIMULATION SYSTEM, AND METHOD OF CORRECTING MASK PATTERN

• Main Author: KAWAKAMI YUKIYA
• Format: Patent
• Language: English
• Published: 13.12.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To solve the problem that a large restriction is imposed on a design when a fixed point is installed in empirical lithography simulation. SOLUTION: A simulation system 1 comprises an input acceptor 10, a calculator 30, and a determiner 40. The input acceptor 10 accepts an input about measured dimensions of a transfer pattern. The calculator 30 includes an intensity calculator 32 and a corrected light intensity calculator 36. The light intensity calculator 32 calculates a light intensity for each position. The corrected light intensity calculator 36 calculates a corrected light intensity by adding a corrected value including a product of the light intensity and a temporary light reaction coefficient to the light intensity. The determiner 40 sets, as constants, thresholds of light intensities at two edges forming a pair prescribing calculated dimensions of the transfer pattern in the simulation, and determines the thresholds and the light reaction coefficient through regression calculation so that a difference becomes minimum between the calculated dimensions and the measured dimensions. COPYRIGHT: (C)2008,JPO&INPIT