FILM-FORMING APPARATUS AND FILM-FORMING METHOD

• Main Authors: IKEDA SATOSHI, UKISHIMA YOSHIYUKI, TAKEI HIDEO, SAKIO SUSUMU
• Format: Patent
• Language: English
• Published: 13.12.2007
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film-forming apparatus for imparting a high quality to a formed insulation film, and to provide a film-forming method therefor. SOLUTION: The film-forming apparatus 1 has an ionizer 25. An ionizer 25 is installed in the middle of a path for a reaction gas. The reaction gas is ionized on the way of passing through the path by the ionizer 25. The ionized reaction gas is introduced into a film-forming chamber 2. When a target 6 is sputtered while the ionized reaction gas is introduced into the film-forming chamber 2, the sputtered particles react with the reaction gas and form a film of a reactant on the surface of a substrate 11. The method of sputtering the target after having ionized the reaction gas can form a film of high quality at a higher film-forming rate than a method which does not ionize the reaction gas. COPYRIGHT: (C)2008,JPO&INPIT