THIN-FILM SILICON SUBSTRATE AND PRODUCTION METHOD THEREFOR

• Main Authors: KOAIZAWA HISASHI, NAKAMURA TADAHIRO, KURASEKO HIROSHI, TODA SADAYUKI
• Format: Patent
• Language: English
• Published: 29.11.2007
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To produce a thin-film silicon substrate at a high temperature and high film-forming velocity with the use of a film-forming method using a gas in a CVD process. SOLUTION: The thin-film silicon substrate relates to a silicon substrate for a solar cell. The production method includes forming the thin film of silicon into the thickness of 100 to 5 μm on one surface of a belt-shaped thin glass substrate having such a cross section as a ratio of width to thickness is 10 or less, by reacting the source gas in the CVD process. COPYRIGHT: (C)2008,JPO&INPIT