THIN-FILM SILICON SUBSTRATE AND PRODUCTION METHOD THEREFOR
PROBLEM TO BE SOLVED: To produce a thin-film silicon substrate at a high temperature and high film-forming velocity with the use of a film-forming method using a gas in a CVD process. SOLUTION: The thin-film silicon substrate relates to a silicon substrate for a solar cell. The production method inc...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
29.11.2007
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To produce a thin-film silicon substrate at a high temperature and high film-forming velocity with the use of a film-forming method using a gas in a CVD process. SOLUTION: The thin-film silicon substrate relates to a silicon substrate for a solar cell. The production method includes forming the thin film of silicon into the thickness of 100 to 5 μm on one surface of a belt-shaped thin glass substrate having such a cross section as a ratio of width to thickness is 10 or less, by reacting the source gas in the CVD process. COPYRIGHT: (C)2008,JPO&INPIT |
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Bibliography: | Application Number: JP20060138829 |