METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: TAKEDA HIROYUKI, TAKEWAKA HIROMOTO, ARAI TOSHIYUKI, MATSUKUBO TAKASHI
• Format: Patent
• Language: English
• Published: 22.11.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a technology of fully removing foreign substances produced by removing a film formed on the end of a semiconductor wafer from the wafer in a washing step. SOLUTION: The method comprises a step of forming a hydrophobic SiOC film 8 having a lower dielectric constant than a silicon oxide film on a semiconductor wafer 1, forming a hydrophilic silicon oxide film 9 on the SiOC film 8 which may be made by the CVD method using TEOS as a raw material, polishing and removing the laminate film formed on the end 1A of the wafer 1 using e.g. a polishing drum, and removing foreign substances produced by removing the film formed on the end 1A of the wafer 1 using a washing solution 15. This solution 15 completely removes the foreign substances, since the substances deposit on the hydrophilic silicon oxide film. COPYRIGHT: (C)2008,JPO&INPIT