BONDING MATERIAL

PROBLEM TO BE SOLVED: To provide a semiconductor device using a bonding material with a thick film which can ensure a good stress-relaxation property and a package height in a μBGA structure, and which achieves good chip lamination and wire bonding in stacked CSP. SOLUTION: The semiconductor device...

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Bibliographic Details
Main Authors HOSOKAWA YOICHI, KANEDA MAIKO, MASUNO MICHIO, MATSUZAKI TAKAYUKI
Format Patent
LanguageEnglish
Published 08.11.2007
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device using a bonding material with a thick film which can ensure a good stress-relaxation property and a package height in a μBGA structure, and which achieves good chip lamination and wire bonding in stacked CSP. SOLUTION: The semiconductor device has a structure in which at least two semiconductor chips 7, 9 are laminated on a semiconductor chip-mounting surface of a wiring board 5, and the semiconductor chips 7, 9 are bonded each other using a film form bonding material 1 having a thickness of 150 μm and more. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20070121193