SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a stable body fixing operation and high integration are actualized and the parasitic capacity and wiring capacity can be reduced and which is formed on a SOI substrate. SOLUTION: A MOS transistor is formed of a source region 1, a drain...

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Bibliographic Details
Main Author TSUJIUCHI MIKIO
Format Patent
LanguageEnglish
Published 01.11.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device in which a stable body fixing operation and high integration are actualized and the parasitic capacity and wiring capacity can be reduced and which is formed on a SOI substrate. SOLUTION: A MOS transistor is formed of a source region 1, a drain region 2 and a gate electrode 3. Partial separation regions 11a and 11b are formed in one end region of a gate and the other end region of the gate. A tap region 21a is formed adjacently to the partial separation region 11a. A tap region 21b is formed adjacently to the partial separation region 11b. A complete separation region 10 is formed in peripheral regions of the partial separation regions 11a and 11b, the tap regions 21a and 21b and the active regions 1 and 2. COPYRIGHT: (C)2008,JPO&INPIT
Bibliography:Application Number: JP20060110038