METHOD FOR MANUFACTURING GRANULAR SILICON SINGLE CRYSTAL

• Main Authors: SUDA NOBORU, KITAHARA NOBUYUKI, ARIMUNE HISAO, SUZUKI TOSHIO, SUGAWARA MAKOTO
• Format: Patent
• Language: English
• Published: 01.11.2007
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To stably manufacture granular silicon having high crystallinity in the case of manufacturing the granular silicon, and at the same time, to manufacture silicon particles having high crystallinity at a low cost. SOLUTION: A method for manufacturing a granular silicon single crystal comprises preparing a granular silicon crystal by discharging and dropping a silicon melt 4 from a nozzle part 3 of a crucible 1 in the form of droplets and simultaneously cooling and solidifying the silicon melt 4 during falling, and then converting the granular silicon crystal into the granular silicon single crystal by heat treating it. The granular silicon crystal having high crystallinity can be manufactured at a low cost by cooling and solidifying the silicon melt 4 during falling and further, converting the granular silicon crystal into the granular silicon single crystal by heat treating it. COPYRIGHT: (C)2008,JPO&INPIT