MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of manufacturing the semiconductor element in which a semiconductor layer is grown by maintaining a recessed shape on the surface of a semiconductor section having a recessed shape on the surface without impos...

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Bibliographic Details
Main Author NAKASAKI RYUSUKE
Format Patent
LanguageEnglish
Published 27.09.2007
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of manufacturing the semiconductor element in which a semiconductor layer is grown by maintaining a recessed shape on the surface of a semiconductor section having a recessed shape on the surface without imposing a burden on a crystal growth apparatus and without causing deterioration and variations in device characteristics. SOLUTION: The manufacturing method of a semiconductor element includes a process for forming a recessed semiconductor section having a recessed shape formed by a bottom surface, having a (001) plane and an inner surface having a low-index surface, on the surface; and a process for growing a semiconductor layer on the surface of the recessed semiconductor section at the temperature of the re-evaporation region of a growth raw material by using the growth raw material having an ethyl group. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060073148