MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of manufacturing the semiconductor element in which a semiconductor layer is grown by maintaining a recessed shape on the surface of a semiconductor section having a recessed shape on the surface without impos...
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Main Author | |
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Format | Patent |
Language | English |
Published |
27.09.2007
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of manufacturing the semiconductor element in which a semiconductor layer is grown by maintaining a recessed shape on the surface of a semiconductor section having a recessed shape on the surface without imposing a burden on a crystal growth apparatus and without causing deterioration and variations in device characteristics. SOLUTION: The manufacturing method of a semiconductor element includes a process for forming a recessed semiconductor section having a recessed shape formed by a bottom surface, having a (001) plane and an inner surface having a low-index surface, on the surface; and a process for growing a semiconductor layer on the surface of the recessed semiconductor section at the temperature of the re-evaporation region of a growth raw material by using the growth raw material having an ethyl group. COPYRIGHT: (C)2007,JPO&INPIT |
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Bibliography: | Application Number: JP20060073148 |