SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of improving the proofs of an insulating-gate transistor. SOLUTION: In the semiconductor device, a p- type channel region 2 is formed on the top surface of an n- type semiconductor substrate 1; and in the surface region of the p- type ch...

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Bibliographic Details
Main Author KUROKAWA ATSUO
Format Patent
LanguageEnglish
Published 20.09.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of improving the proofs of an insulating-gate transistor. SOLUTION: In the semiconductor device, a p- type channel region 2 is formed on the top surface of an n- type semiconductor substrate 1; and in the surface region of the p- type channel region 2, an n+type source region 3 and a p+type channel-contact region 4 are formed. Also, a metal electrode 31 is so formed as to contact with the top surface of the p+type channel-contact region 4. Further, the n+type source region 3 is connected with the metal electrode 31 via a resistor 32, and an insulating film 33 is provided between the resistor 32 and the metal electrode 31. Moreover, the resistor 32 is contacted with the metal electrode 31 via a contacting hole 34 formed in the insulating film 33. Furthermore, the resistor 32 is not formed in the top-surface region of the p+type channel-contact region 4. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060062912