CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT

PROBLEM TO BE SOLVED: To provide a CPP-type magnetoresistance effect element or the like capable of avoiding the drop in a shielding function of a magnetic shielding film while improving MR. SOLUTION: The CPP-type magnetoresistance effect element 51 includes a magnetoresistance effect film 53 and a...

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Bibliographic Details
Main Authors NOGUCHI KIYOSHI, YAMAGUCHI ATSUSHI, SHIMAZAWA KOJI, HIRATA KYO
Format Patent
LanguageEnglish
Published 20.09.2007
Subjects
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Summary:PROBLEM TO BE SOLVED: To provide a CPP-type magnetoresistance effect element or the like capable of avoiding the drop in a shielding function of a magnetic shielding film while improving MR. SOLUTION: The CPP-type magnetoresistance effect element 51 includes a magnetoresistance effect film 53 and a pair of upper and lower power supply magnetic shielding films 55 and 57 sandwiching the film 53. The lower power supply magnetic shielding film 55 of the pair of shielding films includes at least a two-layered structure, including a crystalline material layer 71 and an amorphous material layer 73 provided thereunder. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060061076