SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the generation of a path gate leak even if a body contact structure is not employed, and to provide a manufacturing method thereof. SOLUTION: In the semiconductor device having an SRAM consisting of a plurality of memory c...

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Bibliographic Details
Main Author KATO TATSU
Format Patent
LanguageEnglish
Published 13.09.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the generation of a path gate leak even if a body contact structure is not employed, and to provide a manufacturing method thereof. SOLUTION: In the semiconductor device having an SRAM consisting of a plurality of memory cells 50, path gate transistors Q5, Q6 constituting each memory cell 50 are each a bulk transistor (directly formed on a silicon substrate), and the other transistors Q1-Q4 are each an SOI transistor (formed on an Si layer of an SOI structure partially formed on the silicon substrate). In this configuration, a substrate potential of the path gate transistors Q5, Q6 can be fixed on a GND, for example, and charge accumulation on a portion below a channel region of the path gate transistors Q5, Q6 can be prevented. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060053387