ANTIREFLECTION FILM AND EXPOSURE METHOD

• Main Authors: BOONTARIKA THUNNAKART, WATANABE YOKO, KUROBE TOSHIHIRO, OZAWA KEN, MATSUZAWA NOBUYUKI
• Format: Patent
• Language: English
• Published: 30.08.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.2-1.3, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N1, N2of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N1=n1-k1i, N2=n2-k2i, film thicknesses of the upper layer and lower layer are d1, d2and a predetermined combination is selected as the combination of values [n10, k10, d10, n20, k20, d20], n1, k1, d1, n2, k2, d2satisfy the following relation: ä(n1-n10)/(n1m-n10)}2+ä(k1-k10)/(k1m-k10)}2+ä(d1-d10)/(d1m-d10)}2+ä(n2-n20)/(n2m-n20)}2+ä(k2-k20)/(k2m-k20)}2+ä(d2-d20)/(d2m-d20)}2≤1. COPYRIGHT: (C)2007,JPO&INPIT