SEMICONDUCTOR LASER DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can make small a spreading angle in the slow axis direction of a laser beam emitted to the external side. SOLUTION: In the semiconductor laser device 1, a part of the laser beam L1 emitted from each active layer 2 of a semiconductor...

Full description

Saved in:
Bibliographic Details
Main Authors TEI USHIN, SUGA HIROBUMI
Format Patent
LanguageEnglish
Published 16.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can make small a spreading angle in the slow axis direction of a laser beam emitted to the external side. SOLUTION: In the semiconductor laser device 1, a part of the laser beam L1 emitted from each active layer 2 of a semiconductor laser array 3 is reciprocated between a wavelength selecting element 6 and the active layer 2, while it is amplified with the active layer 2. But, in this case, the reflecting surface 7 of the wavelength selecting element 6 forms an angle of 2.3° or more but 2.5° or less for the surface orthogonally crossing the optical axis direction of the active layer 2. Therefore, when the laser beam L5 having progressed to the other side of the slow axis direction among the reciprocated laser beam is emitted to the external side, a spreading angle can be reduced remarkably in the slow axis direction of the laser beam L5. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060023032