FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

• Main Authors: NAKAZAWA TOSHIYUKI, UEDA TETSUZO
• Format: Patent
• Language: English
• Published: 16.08.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a field effect transistor which has a high Schottky barrier to achieve a normally-off type and suppresses an increase in parasitic resistance, and to provide its manufacturing method. SOLUTION: An undoped GaN layer 102 and an n-type AlGaN layer 103 are formed on a sa...