FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a field effect transistor which has a high Schottky barrier to achieve a normally-off type and suppresses an increase in parasitic resistance, and to provide its manufacturing method. SOLUTION: An undoped GaN layer 102 and an n-type AlGaN layer 103 are formed on a sa...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
16.08.2007
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Subjects | |
Online Access | Get full text |
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