SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

• Main Author: HIROSHIMA YASUSHI
• Format: Patent
• Language: English
• Published: 09.08.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of obtaining a high performance thin film transistor with little variation in characteristics in three-dimensional formation of a semiconductor device. SOLUTION: The manufacturing method of the semiconductor device includes steps of forming a monocrystal or approximately monocrystal bottomed recess serving as a starting point in crystallization of a semiconductor film on a surface of a substrate; forming the semiconductor film on the substrate where the recess is formed; forming an approximately monocrystal grain having the starting point as an approximate center by heat treatment on the semiconductor film; patterning the semiconductor film; forming transistor regions to serve as a source/drain region and a channel formation region; and forming a gate insulation film and a gate electrode on the transistor regions to form the thin film transistor. In forming the transistor regions, at least the channel formation region is selected to be a region in the approximately monocrystal grain of the semiconductor film and not containing a direction in a crystal orientation of the substrate. COPYRIGHT: (C)2007,JPO&INPIT