METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that reduces an amount of warpage of a semiconductor wafer due to a heat treatment of the semiconductor wafer. SOLUTION: The method for manufacturing the semiconductor device having a back electrode includes a stage o...

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Bibliographic Details
Main Authors TSUJINO TADASHI, MATSUMURA TAMIO
Format Patent
LanguageEnglish
Published 02.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that reduces an amount of warpage of a semiconductor wafer due to a heat treatment of the semiconductor wafer. SOLUTION: The method for manufacturing the semiconductor device having a back electrode includes a stage of preparing the semiconductor wafer having a top surface and a reverse surface, a heat-treating stage of forming a first metal layer on the reverse surface of the semiconductor wafer and forming ohmic bonding between the semiconductor wafer and first metal layer through the heat treatment, and a stage of forming a second metal layer of Ni on the reverse surface of the semiconductor substrate after the heat treatment. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060013349