MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

• Main Author: HIROSHIMA YASUSHI
• Format: Patent
• Language: English
• Published: 02.08.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of achieving the activation of impurities in source/drain regions even by a heat treatment at a low temperature, and capable of obtaining a thin-film transistor having a high performance. SOLUTION: A plurality of starting points are formed at places as the starting points at a time when a semiconductor film is crystallized, where approximate single crystal grains are contained in the source/drain regions on a substrate, and the semiconductor film is formed on the substrate with the formed starting point sections. The semiconductor film is treated thermally, a plurality of the approximate single crystal grains are formed approximately centering around each of a plurality of the starting point sections, and the semiconductor film is patterned. The source/drain regions and a transistor region as a channel forming region are formed, and a gate insulating film and a gate electrode are formed on the transistor region. A part of the source/drain regions is brought to an amorphous state by implanting ions from the upper sections of the gate insulating film and the gate electrode, and impurities are introduced into the source/drain regions brought to the amorphous state. The source/drain regions with the introduced impurities are treated thermally, and the crystallizability of the source/drain regions is recovered. COPYRIGHT: (C)2007,JPO&INPIT