SILICON NITRIDE SUBSTRATE, CIRCUIT BOARD AND MODULE USING THE SAME

PROBLEM TO BE SOLVED: To provide a silicon nitride substrate having superior thermal conductivity and reliability, a circuit board and a module that uses the substrate. SOLUTION: In the silicon nitride substrate, short-axis particles of silicon nitride having low thermal conductivity and an amorphou...

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Bibliographic Details
Main Authors GOTO TAKESHI, OTSUKA TETSUMI
Format Patent
LanguageEnglish
Published 26.07.2007
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LIME, MAGNESIA
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
METALLURGY
PRINTED CIRCUITS
REFRACTORIES
SEMICONDUCTOR DEVICES
SLAG
TREATMENT OF NATURAL STONE
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Summary:PROBLEM TO BE SOLVED: To provide a silicon nitride substrate having superior thermal conductivity and reliability, a circuit board and a module that uses the substrate. SOLUTION: In the silicon nitride substrate, short-axis particles of silicon nitride having low thermal conductivity and an amorphousized sintering auxiliary agent covering the surface of the substrate are removed by grinding. The substrate, after grounding, is set to have a center-line average roughness (Ra) of 0.1-0.8 μm, maximum height (Ry) of 5 μm or smaller, and thermal conductivity of 80 W/m K or higher. As a result, the substrate has high thermal conductivity and high reliability. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060006862