SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME, INTEGRATED CIRCUIT, ELECTROOPTICAL DEVICE, AND ELECTRONIC EQUIPMENT

• Main Author: HIROSHIMA YASUSHI
• Format: Patent
• Language: English
• Published: 26.07.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which enables to stably obtain thin-film transistors having high performance over an entire substrate. SOLUTION: This method of manufacturing the semiconductor device includes a first process of forming concave portions (125) on one surface side of a substrate (11), second process of forming a first semiconductor film (130) on the one surface side of the substrate, third process of executing planarization processing from the first semiconductor film side toward the one surface side of the substrate, fourth process of forming a second semiconductor film (130b) on the one surface side of the substrate, fifth process of executing heat treatment for the second semiconductor film to form substantial single crystal grains (131) substantially centered on each of the concave portions, and sixth process of forming a semiconductor element using the second semiconductor film. COPYRIGHT: (C)2007,JPO&INPIT