PROCESS FOR PRODUCING SGOI SUBSTRATE

PROBLEM TO BE SOLVED: To provide an SGOI substrate and to provide its production process. SOLUTION: In the process for producing a strain relaxation SGOI substrate having a strain relaxation SiGe layer on an SOI substrate, (1) an SiGe layer is grown epitaxially on the Si layer of the SOI substrate u...

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Bibliographic Details
Main Authors KAWAMURA KEISUKE, DEAI HIROYUKI, IIKAWA HIROFUMI
Format Patent
LanguageEnglish
Published 12.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an SGOI substrate and to provide its production process. SOLUTION: In the process for producing a strain relaxation SGOI substrate having a strain relaxation SiGe layer on an SOI substrate, (1) an SiGe layer is grown epitaxially on the Si layer of the SOI substrate using a reduced pressure CVD apparatus of 760 Torr or belw in an atmospheric gas of SiH4/GeH4at a growth temperature of 550-950°C to provide a strained SiGe layer not having periodic cross hatching-like surface roughness where the concentration of Ge is 10-30% and the RMS value of surface roughness is smaller than 0.5 nm in an observation region of 100 μm2, and (2) the SOI substrate having the strained SiGe layer is heat treated at 900-1,350°C within 50 hours thus relaxing strain by increase or not increasing the concentration of Ge. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050377286