SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

PROBLEM TO BE SOLVED: To form shallow bonding source/drain for a p-channel type field effect transistor employing strain Si technology. SOLUTION: A p-type diffusion region 5c mainly constituting the source/drain of a pMIS1p is formed of p+-SiGe/p-SiGe:C/p--SiGe, while p-type impurity of relatively h...

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Bibliographic Details
Main Authors MIYASHITA ISAO, EGUCHI SOJI, KANAI AKIRA
Format Patent
LanguageEnglish
Published 28.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To form shallow bonding source/drain for a p-channel type field effect transistor employing strain Si technology. SOLUTION: A p-type diffusion region 5c mainly constituting the source/drain of a pMIS1p is formed of p+-SiGe/p-SiGe:C/p--SiGe, while p-type impurity of relatively high concentration is introduced into p+-SiGe and the p-type impurity of a relatively low concentration is introduced into the p--SiGe. It is necessary to introduce the p-type impurity of relatively high concentration to reduce a contact resistance. The depth of the p-type diffusion region 5c, however, is maintained so as to be shallow since the diffusion thereof is suppressed by the p-SiGe:C. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050361181