METHOD OF FORMING SEMICONDUCTOR DEVICE USING EMBEDDED L-SHAPED SPACER, AND SEMICONDUCTOR DEVICE THEREOF

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer s...

Full description

Saved in:
Bibliographic Details
Main Authors ATUL C AJMERA, LUO ZHIJIONG, TEH YOUNG WAY
Format Patent
LanguageEnglish
Published 14.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer so that the oxide layer covers a portion of the substrate to a predetermined distance from a side edge of the L-shaped spacer. Further, an oxide layer is removed to expose the L-shaped spacer. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060319319