THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, AND ARRAY SUBSTRATE HAVING THE TRANSISTOR AND ITS MANUFACTURING METHOD

• Main Author: HAN CHANG WOOK
• Format: Patent
• Language: English
• Published: 14.06.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor of a top-gate-type bottom contact structure without giving a damage to a semiconductor layer made up of an organic semiconductor substance and to provide an array substrate having a plurality of the same. SOLUTION: The thin film transistor is formed in a top-gate-type structure which includes a source electrode and drain electrode formed on a substrate, a low-molecular organic semiconductor layer formed on the source electrode and drain electrode, a gate insulating layer formed on the low-molecular organic semiconductor layer, and a gate electrode formed on the gate insulating film. A characteristic of an element can be elevated using a film transistor whose back of the organic semiconductor layer contacted with the surfaces of source electrode and drain electrode and the array substrate having it. Moreover, a buffer layer having a smooth surface is formed, and the organic semiconductor layer is formed on the buffer layer, thereby, the crystallinity of the organic semiconductor layer is improved, and the characteristic of the element can be more elevated. COPYRIGHT: (C)2007,JPO&INPIT