ETCHING METHOD FOR SEMICONDUCTOR WAFER

PROBLEM TO BE SOLVED: To provide an etching method for a semiconductor wafer which improves flatness and nano topography. SOLUTION: In the etching method of the semiconductor wafer, a plurality of semiconductor wafers are held in a state that plate surfaces are kept opposed to each other to effect e...

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Bibliographic Details
Main Authors SHOJI MAKOTO, NAKATANI TAKAFUMI
Format Patent
LanguageEnglish
Published 14.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an etching method for a semiconductor wafer which improves flatness and nano topography. SOLUTION: In the etching method of the semiconductor wafer, a plurality of semiconductor wafers are held in a state that plate surfaces are kept opposed to each other to effect etching while rotating them. A rotary member is arranged between the semiconductor wafers. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050342191