VERTICAL SEMICONDUCTOR DEVICE SUCH AS POWER MOSFET AND IGBT, AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a structure for improving resisting pressure in a vertical semiconductor device such as power MOS-FET and an IGBT element, and to provide a manufacturing method of the device. SOLUTION: The vertical semiconductor device such as MOS-FET and the IGBT element has the st...

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Bibliographic Details
Main Authors NISHIMURA YOSHIKAZU, SODA YUTAKA
Format Patent
LanguageEnglish
Published 31.05.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a structure for improving resisting pressure in a vertical semiconductor device such as power MOS-FET and an IGBT element, and to provide a manufacturing method of the device. SOLUTION: The vertical semiconductor device such as MOS-FET and the IGBT element has the structure where gate wiring is selectively formed on a main face of a drain region through a source electrode and an insulating layer as an opposite electrode. A mask for forming a source region is corrected, and a diffusion layer for maintaining resisting pressure is formed in a drift layer just below gate wiring in an island shape by diffusion in the same process as source formation. Extension is suppressed in a depletion layer to a source electrode direction of the drift layer. Resisting pressure deterioration is improved in concentration of an electric field, and resisting pressure is improved. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050324319