POLYMER FOR RESIST, RESIST MATERIAL, AND PATTERN FORMATION METHOD

• Main Authors: WATANABE TAKESHI, YOSHIHARA TAKAO, TACHIBANA SEIICHIRO
• Format: Patent
• Language: English
• Published: 17.05.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To provide a positive-type resist material wherein the pattern degradation during developing operation is inhibited and the mask error factor is reduced. SOLUTION: The resist material is a resin wherein the rate of dissolution into an alkali developer is increased by the action...