POLYMER FOR RESIST, RESIST MATERIAL, AND PATTERN FORMATION METHOD

PROBLEM TO BE SOLVED: To provide a positive-type resist material wherein the pattern degradation during developing operation is inhibited and the mask error factor is reduced. SOLUTION: The resist material is a resin wherein the rate of dissolution into an alkali developer is increased by the action...

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Bibliographic Details
Main Authors WATANABE TAKESHI, YOSHIHARA TAKAO, TACHIBANA SEIICHIRO
Format Patent
LanguageEnglish
Published 17.05.2007
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:PROBLEM TO BE SOLVED: To provide a positive-type resist material wherein the pattern degradation during developing operation is inhibited and the mask error factor is reduced. SOLUTION: The resist material is a resin wherein the rate of dissolution into an alkali developer is increased by the action of an acid, and the resin is a polymer containing one or more kinds of repeating units represented by general formulas (1) and (2) (wherein R1, R2, and R4are each independently a hydrogen atom or a methyl group; R3is a difluoromethyl or trifluoromethyl group; and X is a tertiary alkyl group). COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050316400