SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To uniformly activate MOS transistors in an ESD protection element with a multi-finger structure composed of a plurality of MOS transistors. SOLUTION: A plurality of gate electrodes 12 are arranged in parallel so that source regions 11S and drain regions 11D are formed on a sub...

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Bibliographic Details
Main Authors KAWASHIMA HIROBUMI, SUDO CHIE
Format Patent
LanguageEnglish
Published 10.05.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To uniformly activate MOS transistors in an ESD protection element with a multi-finger structure composed of a plurality of MOS transistors. SOLUTION: A plurality of gate electrodes 12 are arranged in parallel so that source regions 11S and drain regions 11D are formed on a substrate on both sides of the gate electrodes 12. On the source regions 11S, there are formed a plurality of source contacts 13, and a plurality of drain contacts 14 are formed on the drain regions 11D. Between the gate electrode 12 and the plurality of drain contacts 14, a salicide block 15 for preventing silicide formation on the drain region 11D is formed, and a substrate contact 16 is formed on the semiconductor substrate that is electrically connected to the semiconductor substrate. Further, the salicide block 15 is formed such that its length in a channel length direction becomes the longer, the farther it gets from the substrate contact 16. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20050308629