CMOS AMPLIFIER USING FOUR-TERMINAL DOUBLE INSULATION GATE FIELD TRANSISTOR, MULTI-INPUT CMOS AMPLIFIER, HIGH GAIN MULTI-INPUT CMOS AMPLIFIER, HIGH GAIN HIGHLY STABLE MULTI-INPUT CMOS AMPLIFIER, AND MULTI-INPUT CMOS DIFFERENTIAL AMPLIFIER

• Main Authors: SEKIKAWA TOSHIHIRO, KOIKE HANPEI
• Format: Patent
• Language: English
• Published: 26.04.2007
• Subjects: AMPLIFIERS; BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

PROBLEM TO BE SOLVED: To provide a CMOS amplifier using a four-terminal double insulation gate field transistor, a multi-input CMOS amplifier; a high gain multi-input CMOS amplifier, a high gain highly stable multi-input CMOS amplifier; and a multi-input CMOS differential amplifier for clearing away a restriction of the number of amplifying stages by an input offset voltage Vofs, and eliminating a bad influence on a signal input path without applying a limit of input impedance of an amplifier. SOLUTION: In the CMOS amplifier, p-type and n-type four-terminal double insulation gate field effect transistors are used, and each drain is connected in common and used as an output terminal; while respective first gates are connected and used as a first input terminal, and respective second gates are connected and used as a second input terminal. In the multi-input CMOS amplifier, two or more CMOS amplifiers are used and respective output terminals are connected and used as one output terminal, while the input terminals of each CMOS amplifier are used as independent plural input terminals in a number, which is double of the same number thereof. COPYRIGHT: (C)2007,JPO&INPIT