WAFER INSPECTION METHOD AND EQUIPMENT THEREOF

• Main Author: FUSEGAWA KAZUHIRO
• Format: Patent
• Language: English
• Published: 26.04.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a wafer inspection method by a copper depositing method, by which a high quality wafer can be inspected with a high reliability by preventing a copper from depositing to places other than a crystal defect. SOLUTION: The wafer inspection method comprises the steps of forming an insulating film on a front surface of the wafer, locating methanol liquid containing a copper ion intervening at the insulating film side between electrodes, and depositing the copper at a defective portion of the wafer front surface by impressing voltage between the electrodes. In this case, first of all a dielectric breakdown is made to be produced at the oxide film of the defective portion of the wafer front surface, by impressing a voltage by which the insulating film side serves as a negative potential. Then, the copper is deposited at a portion where the dielectric breakdown is carried out by impressing a voltage by which the insulating film side serves as a positive potential. COPYRIGHT: (C)2007,JPO&INPIT