SOLID STATE ELEMENT DEVICE

PROBLEM TO BE SOLVED: To provide a solid state element device having a highly reliable sealing structure in which glass sealing can be embodied at a low temperature. SOLUTION: A P2O5-ZnO based low melting point glass is set in parallel with an Al2O3substrate 3 containing glass and mounting a GaN bas...

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Bibliographic Details
Main Authors YAMAMOTO YOSHINORI, KATO HIDEAKI, OTA KOICHI, SAWANOBORI SHIGETO, SUEHIRO YOSHINOBU, JINME KUNIHIRO, TOUMON RYOICHI, INOUE MITSUHIRO, WADA SATOSHI, WATABE HIROMI, OTSUKA MASAAKI, AIDA KAZUYA
Format Patent
LanguageEnglish
Published 19.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a solid state element device having a highly reliable sealing structure in which glass sealing can be embodied at a low temperature. SOLUTION: A P2O5-ZnO based low melting point glass is set in parallel with an Al2O3substrate 3 containing glass and mounting a GaN based LED element 2, and then hot pressed in nitrogen atmosphere at 415°C or above under a pressure of 60 kgf. Viscosity of the low melting point glass is 109poise under that condition and the low melting point glass is bonded through an oxide formed on the surface of the Al2O3substrate 3 containing glass. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20070012069