ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE, METHOD OF MANUFACTURING SAME, THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY DEVICE, METHOD OF MANUFACTURING SAME, AND LIQUID CRYSTAL DISPLAY DEVICE

PROBLEM TO BE SOLVED: To obtain an array substrate for a liquid crystal display device capable of preventing failures that are the disconnection of gate electrodes and improving an aperture ratio, and to obtain a method of manufacturing the same. SOLUTION: A first characteristic is forming a project...

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Bibliographic Details
Main Authors PARK YONG IN, KANG SU HYUK, KIM YOUNG JOO, LEE DAI YUN
Format Patent
LanguageEnglish
Published 19.04.2007
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PROBLEM TO BE SOLVED: To obtain an array substrate for a liquid crystal display device capable of preventing failures that are the disconnection of gate electrodes and improving an aperture ratio, and to obtain a method of manufacturing the same. SOLUTION: A first characteristic is forming a projection G projecting from a gate electrode 122 at a part where the gate electrode 122 and a semiconductor layer 110 intersect each other in forming a thin film transistor in an array substrate. A second characteristic is simplifying steps by simultaneously performing doping steps for forming the thin film transistor and a storage capacitor. Moreover, the need for considering alignment margins is eliminated to improve an aperture ratio in designing a light intercepting means by forming the light intercepting means (black matrix) in the array substrate. Forming the projection G prevents failures that are the disconnection of gate electrodes due to an etching solution permeating the intersection part in the patterning of the gate electrode 122. COPYRIGHT: (C)2007,JPO&INPIT
Bibliography:Application Number: JP20060177137